UNEXPECTEDLY HIGH-ENERGY PHOTO-LUMINESCENCE OF HIGHLY SI DOPED GAAS GROWN BY MOVPE

被引:39
作者
DRUMINSKI, M [1 ]
WOLF, HD [1 ]
ZSCHAUER, KH [1 ]
WITTMAACK, K [1 ]
机构
[1] GESELL STRAHLEN & UMWELTFORSCH MBH,D-8042 NEUHERBERG,FED REP GER
关键词
D O I
10.1016/0022-0248(82)90486-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:318 / 324
页数:7
相关论文
共 21 条
[1]   CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].
CASEY, HC ;
STERN, F .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643
[2]  
CASEY HC, 1968, J ELECTROCHEM SOC, V114, P149
[3]   CONTACT SIZE EFFECTS ON VAN VANDERPAUW METHOD FOR RESISTIVITY AND HALL-COEFFICIENT MEASUREMENT [J].
CHWANG, R ;
SMITH, BJ ;
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1974, 17 (12) :1217-1227
[4]   COMBINATION OF 2 GROWTH METHODS FOR EPITAXIAL DEPOSITION OF SILICON FILMS ON INSULATING SUBSTRATES [J].
DRUMINSKI, M ;
SCHLOTTERER, H .
JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :249-+
[5]   DETECTION LIMITS OF ELEMENTS IN SPECTRA OF PREMIXED OXY-ACETYLENE FLAMES [J].
FASSEL, VA ;
GOLIGHTLY, DW .
ANALYTICAL CHEMISTRY, 1967, 39 (04) :466-+
[6]   THE EFFECT OF SILICON DOPING ON THE LATTICE-PARAMETER OF GALLIUM-ARSENIDE GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY AND GRADIENT-FREEZE TECHNIQUES [J].
FEWSTER, PF ;
WILLOUGHBY, AFW .
JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) :648-653
[7]   HIGH-PRESSURE PLASMAS AS SPECTROSCOPIC EMISSION SOURCES [J].
GREENFIELD, S ;
BERRY, CT ;
JONES, IL .
ANALYST, 1964, 89 (106) :713-&
[8]   ELECTRICAL AND OPTICAL PROPERTIES OF N-TYPE SI-COMPENSATED GAAS PREPARED BY LIQUID-PHASE EPITAXY [J].
KRESSEL, H ;
NELSON, H .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3720-&
[9]  
LIN AL, 1977, 6TH P INT C CVD, P264
[10]  
METTLER K, UNPUB