QUANTUM EFFICIENCY FOR DEGENERATE P-TYPE PHOTO-LUMINESCENCE AND ELECTRO-LUMINESCENCE IN GAAS CRYSTALS

被引：10

作者：

VANCONG, H ^{[1
]}

机构：

[1] CUNY CITY COLL,DEPT PHYS,NEW YORK,NY 10031

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1981年 / 42卷 / 03期

关键词：

D O I：

10.1016/0022-3697(81)90080-9

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

收藏

页码：193 / 195

页数：3

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[1] ABRAMOWITZ M, 1964, HDB MATH FUNCTIONS, P260
[2] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
CUSANO, DA
[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358
[3] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS
DUMKE, WP
[J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &
[4] QUANTUM EFFICIENCY AND RADIATIVE LIFETIME OF BAND-TO-BAND RECOMBINATION IN HEAVILY DOPED N-TYPE GAAS
HWANG, CJ
[J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1355 - &
[5] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS
LASHER, G
STERN, F
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A553 - &
[6] QUANTUM EFFICIENCY AND RADIATIVE LIFETIME IN DEGENERATE N-TYPE GAAS
VANCONG, H
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1981, 42 (02) : 95 - 99
[7] IMPURITY BAND-STRUCTURE IN DEGENERATE SEMICONDUCTORS FOR BOTH DENSE DONORS AND ACCEPTORS
VANCONG, H
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (01): : 395 - 405
[8] LINEWIDTH OF SPONTANEOUS EMISSION IN LASER-DIODES
VANCONG, H
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01): : K69 - K72
[9] EMISSION NEAR THE ABSORPTION-EDGE IN A DEGENERATE GAAS CRYSTAL
VANCONG, H
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1980, 41 (11) : 1231 - 1234