ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION

被引：116

作者：

LOGAN, RA ^{[1
]}

SCHWARTZ, B ^{[1
]}

SUNDBURG, WJ ^{[1
]}

机构：

[1] BELL TEL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 10期

关键词：

D O I：

10.1149/1.2403267

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1385 / 1390

页数：6

共 11 条

[1]

FIELD RC, PRIVATE COMMUNICATIO

[2] DEGRADATION AND PASSIVATION OF GAP LIGHT-EMITTING DIODES [J].

HARTMAN, RL ;

SCHWARTZ, B ;

KUHN, M .

APPLIED PHYSICS LETTERS, 1971, 18 (07) :304-&

[3] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE [J].

HAYASHI, I ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :150-&

[4] PRELIMINARY RESULTS ON OXIDATION OF GAAS AND GAP DURING CHEMICAL ETCHING [J].

SCHWARTZ, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :657-&

[5]

SCHWARTZ B, 1972, J ELECTROCHEM SOC, V119, pC241

[6] INFLUENCE OF DOPANT CONCENTRATION ON OXIDATION OF N-TYPE GAAS IN H2O [J].

SCHWARTZ, B ;

HASZKO, SE ;

WONSIDLER, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) :1229-+

[7]

SCHWARTZ B, 1972, 4 INT C GAAS REL COM

[8]

SCHWARTZ B, TO BE PUBLISHED

[9] THE CHEMICAL POLISHING OF GALLIUM ARSENIDE IN BROMINE-METHANOL [J].

SULLIVAN, MV ;

KOLB, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :585-587

[10] PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS [J].

TARUI, Y ;

KOMIYA, Y ;

HARADA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :118-&

← 1 2 →