PERFORMANCE OF GAAS SURFACE-BARRIER DETECTORS MADE FROM HIGH-PURITY GALLIUM-ARSENIDE

被引：38
作者：
KOBAYASHI, T
KOYAMA, M
SUGITA, T
TAKAYANAGI, S
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1972年 / NS19卷 / 03期
关键词：
D O I：
10.1109/TNS.1972.4326745
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：324 / +
页数：1
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