OPTICAL-PROPERTIES OF GASE CRYSTALS CONTAINING MN IMPURITY ATOMS .1. EXCITON PHONON INTERACTION

被引：4
|
作者：
GNATENKO, YP
ZHIRKO, YI
KOVALYUK, ZD
机构：
[1] Institute of Physics, Academy of Sciences of the Ukrainian Ssr
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 161卷 / 01期
关键词：
D O I：
10.1002/pssb.2221610142
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The experimentally observed growth of the integrated intensity of the n = 1 exciton absorption band in GaSe crystals is due to its energy degeneracy with the indirect conduction band. Participation of a phonon in such a process is needed to meet the conservation laws. Introduction of a light impurity atom into the interlayer space gives rise to a local interlayer mode capable of controlling the exciton‐phonon processes. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA
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收藏
页码：419 / 426
页数：8
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