SUPPRESSION OF SIDE LOBES IN THE FAR FIELD OF ALGAAS DH STRIPE LASERS BY A TE FACET COATING

被引：3

作者：

KERPS, D

机构：

[1] Hewlett-Packard Laboratories, Solid State Laboratory, Palo Alto

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 05期

关键词：

D O I：

10.1063/1.91155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Side lobes observed in the far-field distribution parallel to the junction plane of DH AlGaAs stripe-geometry lasers can be suppressed by a self-aligned facet masking process. A hole, burnt into a Te coating by the laser emission, allows only the main lobe emission to pass. The result supports the attribution of side lobes to refraction tails in the near field typical of a negative refractive index step wave guide as discussed in a previous paper [see R. W. Engelmann, D. Kerps, and F. Nunes, IEEE Quantum Electron. (to be published)].

引用

页码：372 / 373

页数：2

共 8 条

[1] ANGULAR DISTRIBUTION OF RADIATION FROM GAAS INJECTION LASERS [J].