ELECTRON-MOBILITY IN SI DELTA-DOPED GAAS

被引：9

作者：

KOENRAAD, PM

VANDESTADT, AFW

SHI, JM

HAI, GQ

STUDART, N

VANSANT, P

PEETERS, FM

DEVREESE, JT

PERENBOOM, JAAJ

WOLTER, JH

机构：

[1] UNIV FED SAO CARLOS,DEPT PHYS,BR-13565905 SAO CARLOS,SP,BRAZIL

[2] UNIV ANTWERP,DEPT PHYS,B-2610 ANTWERP,BELGIUM

[3] UNIV NIJMEGEN,HIGH FIELD MAGNET LAB,6525 ED NIJMEGEN,NETHERLANDS

来源：

PHYSICA B | 1995年 / 211卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(94)01094-H

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.

引用

页码：462 / 465

页数：4

共 8 条

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[2] Beck, Anderson, J. Appl. Phys., 62, (1987)
[3] Mezrin, Shik, Theory of single δ-layer, Superlattices and Microstructures, 10, (1990)
[4] Mezrin, Shik, Mezrin, Semicond. Sci. Technol., 7, (1992)
[5] Hai, Studart, Peeters, Devreese, Koenraad, van de Stadt, Wolter, Acc. Int. Conf. Physics of Semiconductors, (1994)
[6] van Hall, Klaver, Wolter, Semicond. Sci. Technol., 3, (1988)
[7] Lassnig, Solid State Commun., 65, (1988)
[8] Schubert, Pfeiffer, West, Izabell, Appl. Phys. Lett., 54, (1989)

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