FOCUSED ION-BEAM MICROMACHING FOR TRANSMISSION ELECTRON-MICROSCOPY SPECIMEN PREPARATION OF SEMICONDUCTOR-LASER DIODES

被引：47
作者：
SZOT, J [1 ]
HORNSEY, R [1 ]
OHNISHI, T [1 ]
MINAGAWA, S [1 ]
机构：
[1] UNIV SYDNEY,ELECTRON MICROSCOPE UNIT,SYDNEY,NSW 2006,AUSTRALIA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期
关键词：
D O I：
10.1116/1.586415
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new method based on focused ion beam micromachining of optoelectronic semiconductor microdevices for cross-sectional transmission electron microscope analyses has been developed. Electron transparent areas in excess of 200-mu-m2 have been fabricated. These enabled an investigation of the origins of structural defects in a prespecified submicron-sized region of GaInP/AlGaInP-based semiconductor laser diodes.
引用
收藏
页码：575 / 579
页数：5
相关论文
共 50 条
  • [31] Modification of semiconductor laser diodes by focused ion beam milling
    Musil, CR
    Patterson, BD
    Auderset, H
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 428 - 432
  • [32] ELECTRON-BEAM CHARGING THERMOGRAPHY OF MIRRORS OF SEMICONDUCTOR-LASER DIODES
    JAKUBOWICZ, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (11) : 6488 - 6494
  • [33] COMBINING TRANSMISSION ELECTRON-MICROSCOPY WITH FOCUSED ION-BEAM SPUTTERING FOR MICROSTRUCTURAL INVESTIGATIONS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    SNYDER, CW
    FREI, MR
    BAHNCK, D
    HOPKINS, L
    HULL, R
    HARRIOTT, L
    CHIU, TY
    FULLOWAN, T
    TSENG, B
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04): : 1514 - 1518
  • [34] Focused ion-beam specimen preparation for atom probe field-ion microscopy characterization of multilayer film structures
    Larson, DJ
    Foord, DT
    Petford-Long, AK
    Cerezo, A
    Smith, GDW
    [J]. NANOTECHNOLOGY, 1999, 10 (01) : 45 - 50
  • [35] LAYER STRUCTURE EVALUATION OF MULTILAYER X-RAY MIRROR BY COMBINATION OF FOCUSED ION-BEAM ETCHING AND TRANSMISSION ELECTRON-MICROSCOPY
    NAKAJIMA, K
    SUDO, S
    YAKUSHIJI, M
    ISHII, T
    AOKI, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2127 - 2129
  • [36] Focused ion-beam milling for field-ion specimen preparation: preliminary investigations
    Larson, DJ
    Foord, DT
    Petford-Long, AK
    Anthony, TC
    Rozdilsky, IM
    Cerezo, A
    Smith, GWD
    [J]. ULTRAMICROSCOPY, 1998, 75 (03) : 147 - 159
  • [37] Removing focused ion-beam damages on transmission electron microscopy specimens by using a plasma cleaner
    Hata, S
    Sosiati, H
    Kuwano, N
    Itakura, M
    Nakano, T
    Umakoshi, Y
    [J]. JOURNAL OF ELECTRON MICROSCOPY, 2006, 55 (01): : 23 - 26
  • [38] A CONTAMINATION-REDUCING METHOD BY ION-BEAM BOMBARDMENT OF THE SPECIMEN IN HIGH-RESOLUTION ELECTRON-MICROSCOPY
    KANAYA, K
    OHO, E
    OGIHARA, A
    [J]. JOURNAL OF ELECTRON MICROSCOPY, 1988, 37 (05): : 261 - 261
  • [39] Plan-view transmission electron microscopy specimen preparation for atomic layer materials using a focused ion beam approach
    Lee, Lan-Hsuan
    Yu, Chia-Hao
    Wei, Chuan-Yu
    Lee, Pei-Chin
    Huang, Jih-Shang
    Wen, Cheng-Yen
    [J]. ULTRAMICROSCOPY, 2019, 197 : 95 - 99
  • [40] ATOMIC SHADOWING SPUTTERED BY ION-BEAM BOMBARDMENT FOR ELECTRON-MICROSCOPY
    KANAYA, K
    HOJOU, K
    ADACHI, K
    TOKI, K
    [J]. JOURNAL OF ELECTRON MICROSCOPY, 1973, 22 (03): : 283 - 283
12345