FOCUSED ION-BEAM MICROMACHING FOR TRANSMISSION ELECTRON-MICROSCOPY SPECIMEN PREPARATION OF SEMICONDUCTOR-LASER DIODES

被引:47
作者
SZOT, J [1 ]
HORNSEY, R [1 ]
OHNISHI, T [1 ]
MINAGAWA, S [1 ]
机构
[1] UNIV SYDNEY,ELECTRON MICROSCOPE UNIT,SYDNEY,NSW 2006,AUSTRALIA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期
关键词
D O I
10.1116/1.586415
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new method based on focused ion beam micromachining of optoelectronic semiconductor microdevices for cross-sectional transmission electron microscope analyses has been developed. Electron transparent areas in excess of 200-mu-m2 have been fabricated. These enabled an investigation of the origins of structural defects in a prespecified submicron-sized region of GaInP/AlGaInP-based semiconductor laser diodes.
引用
收藏
页码:575 / 579
页数:5
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