FOCUSED ION-BEAM MICROMACHING FOR TRANSMISSION ELECTRON-MICROSCOPY SPECIMEN PREPARATION OF SEMICONDUCTOR-LASER DIODES

被引：47

作者：

SZOT, J ^{[1
]}

HORNSEY, R ^{[1
]}

OHNISHI, T ^{[1
]}

MINAGAWA, S ^{[1
]}

机构：

[1] UNIV SYDNEY,ELECTRON MICROSCOPE UNIT,SYDNEY,NSW 2006,AUSTRALIA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期

关键词：

D O I：

10.1116/1.586415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method based on focused ion beam micromachining of optoelectronic semiconductor microdevices for cross-sectional transmission electron microscope analyses has been developed. Electron transparent areas in excess of 200-mu-m2 have been fabricated. These enabled an investigation of the origins of structural defects in a prespecified submicron-sized region of GaInP/AlGaInP-based semiconductor laser diodes.

引用

页码：575 / 579

页数：5

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