STRUCTURE OF CHEMICALLY DEPOSITED POLYCRYSTALLINE-SILICON FILMS

被引：99
作者：
KAMINS, TI [1 ]
CASS, TR [1 ]
机构：
[1] FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
来源：
THIN SOLID FILMS | 1973年 / 16卷 / 02期
关键词：
D O I：
10.1016/0040-6090(73)90164-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：147 / 165
页数：19
相关论文
共 31 条
[1]   THICKNESS MEASUREMENT OF EPITAXIAL FILMS BY THE INFRARED INTERFERENCE METHOD [J].
ALBERT, MP ;
COMBS, JF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (08) :709-713
[2]   ELLIPSOMETRY IN SUB-MONOLAYER REGION [J].
BOOTSMA, GA ;
MEYER, F .
SURFACE SCIENCE, 1969, 14 (01) :52-&
[3]   STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].
BRODSKY, MH ;
TITLE, RS ;
WEISER, K ;
PETTIT, GD .
PHYSICAL REVIEW B, 1970, 1 (06) :2632-&
[4]   ENHANCEMENT OF BREAKDOWN PROPERTIES OF OVERLAY ANNULAR DIODES BY FIELD SHAPING RESISTIVE FILMS [J].
CLARK, LE ;
ZOROGLU, DS .
SOLID-STATE ELECTRONICS, 1972, 15 (06) :653-+
[5]   TEXTURAL PROPERTIES OF GERMANIUM FILMS [J].
DAVEY, JE .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) :877-&
[6]   NONDESTRUCTIVE THICKNESS DETERMINATION OF POLYCRYSTALLINE SILICON DEPOSITED ON OXIDIZED SILICON [J].
DELLOCA, CJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (01) :108-&
[7]  
DELLOCA CJ, PERSONAL COMMUNICATI
[8]   SILICON GATE TECHNOLOGY [J].
FAGGIN, F ;
KLEIN, T .
SOLID-STATE ELECTRONICS, 1970, 13 (08) :1125-&
[9]   STRUCTURE OF SILICON FILMS DEPOSITED ON OXIDIZED SILICON WAFERS [J].
FRIPP, AL ;
CATLIN, A ;
STERMER, RL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) :1569-&
[10]  
GUALTIERI JG, 1960, Z KRISTALLOGR, V114, P9
1234