N-TYPE DOPING OF HIGHLY TETRAHEDRAL DIAMOND-LIKE AMORPHOUS-CARBON

被引：121

作者：

VEERASAMY, VS ^{[1
]}

AMARATUNGA, GAJ ^{[1
]}

DAVIS, CA ^{[1
]}

TIMBS, AE ^{[1
]}

MILNE, WI ^{[1
]}

MCKENZIE, DR ^{[1
]}

机构：

[1] UNIV SYDNEY,SCH PHYS,SYDNEY,NSW 2006,AUSTRALIA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1993年 / 5卷 / 13期

关键词：

D O I：

10.1088/0953-8984/5/13/004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The ability to control the electrical resistivity of semiconducting tetrahedral amorphous carbon (ta-C) films is reported. Phosphorus is incorporated during film growth from a plasma formed with a cathodic vacuum arc by using a phosphorus-containing carbon cathode. By changing the P content in the cathode from 0-1% mass the room temperature resistivity of the films can be changed from 10(7) OMEGA cm to 5 OMEGA cm. Electron energy-loss spectroscopy shows that incorporation of P does not change the amorphous tetrahedral nature of the carbon films deposited by the vacuum arc method.

引用

页码：L169 / L174

页数：6

共 14 条

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