TEMPERATURE-DEPENDENCE OF THE THRESHOLD VOLTAGE IN A DOUBLE-IMPLANTED MOSFET

被引：1

作者：

DWIVEDI, SK

HALDAR, S

GUPTA, RS

机构：

[1] Department of Electronic Science, University of Delhi South Campus, New Delhi, l10021, Benito Juarez Road

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1992年 / 73卷 / 01期

关键词：

D O I：

10.1080/00207219208925646

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependence of the threshold voltage in a double-implanted long channel MOSFET, has been studied by considering the effect of the factor by which the bulk charge is reduced. The variation of this factor with temperature has also been discussed in detail and it has been observed that the factor changes considerably with temperature and has a marked effect on the threshold voltage.

引用

页码：65 / 69

页数：5

共 6 条

[1] SEMIEMPIRICAL MODEL FOR THE THRESHOLD VOLTAGE OF A DOUBLE IMPLANTED MOSFET AND ITS TEMPERATURE-DEPENDENCE [J].