RADIATION-HARDENING STATIC NMOS RAMS

被引：5

作者：

KING, EE

机构：

[1] Naval Research Laboratory

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1979年 / 26卷 / 06期

关键词：

D O I：

10.1109/TNS.1979.4330273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results of an effort to total-dose radiation harden N-channel static random-access-memories are described. Both an aluminum-gate and a silicon-gate process were hardened to a level greater than 104 rads(Si) on a semiconductor memory vendors production line. The aluminum-sate RAMs have been found to operate to well above 10 rads(Si) at low dose rates, suggesting their suitability for space applications. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：5060 / 5064

页数：5

共 5 条

[1]

AUBUCHON KG, 1976, P7753 HUGH AIRCR CO

[2] TOTAL DOSE TESTING OF SEVERAL TYPES OF MOS MICROPROCESSORS [J].