HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS

被引：226
作者：
BIEGELSEN, DK
STREET, RA
TSAI, CC
KNIGHTS, JC
机构：
[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304
来源：
PHYSICAL REVIEW B | 1979年 / 20卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.20.4839
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Changes in the composition and electronic properties of plasma-deposited a-Si: H after annealing at temperatures through 600°C are studied by ESR, luminescence, infrared spectroscopy and hydrogen evolution. The generation of paramagnetic defects in a-Si: H on annealing is found to depend only on the amount of hydrogen evolved. The relation of peaks in the hydrogen-evolution rate to specific local hydrogen-bonding environments is studied and shown to be dominated by the effects of diffusion and sample microstructure. © 1979 The American Physical Society.
引用
收藏
页码：4839 / 4846
页数：8
相关论文
共 17 条
[1]  
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[2]   QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].
BRODSKY, MH ;
FRISCH, MA ;
ZIEGLER, JF ;
LANFORD, WA .
APPLIED PHYSICS LETTERS, 1977, 30 (11) :561-563
[3]   SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON [J].
CARLSON, DE ;
MAGEE, CW .
APPLIED PHYSICS LETTERS, 1978, 33 (01) :81-83
[4]   HYDROGEN CONTENT AND DENSITY OF PLASMA-DEPOSITED AMORPHOUS SILICON-HYDROGEN [J].
FRITZSCHE, H ;
TANIELIAN, M ;
TSAI, CC ;
GACZI, PJ .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3366-3369
[5]  
FRITZSCHE H, 1977, 7TH P INT C AM LIQ S, P3
[6]  
KNIGHTS JC, 1978, PHILOS MAG B, V37, P467, DOI 10.1080/01418637808225790
[7]  
KNIGHTS JC, 1979, APPL PHYS LETT, V35, P242
[8]   HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED AMORPHOUS SILICON FILMS [J].
MATYSIK, KJ ;
MOGAB, CJ ;
BAGLEY, BG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :302-304
[9]   KINETICS OF DECOMPOSITION OF AMORPHOUS HYDROGENATED SILICON FILMS [J].
MCMILLAN, JA ;
PETERSON, EM .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5238-5241
[10]  
PANKOVE JI, 1977, 7TH P INT C AM LIQ S, P402
12