INFLUENCE OF OXYGEN UPON RADIATION DURABILITY OF SIN X-RAY MASK MEMBRANES

被引：6

作者：

OIZUMI, H

IIJIMA, S

MOCHIJI, K

机构：

[1] Central Research Laboratory, Hitachi Ltd., Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期

关键词：

Dangling bond; ESR; Radiation; Radiation damage; SiN membrane; Synchrotron; X-ray lithography; X-ray mask;

D O I：

10.1143/JJAP.29.2199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The radiation durability of a SiN X-ray mask membrane prepared by low pressure chemical vapor deposition (LPCVD) has been investigated. It is shown that the radiation durability of SiN films is marginally affected by their N/Si compositions, crystalline structures or film stress, but is drastically affected by the oxygen concentration in the film. Mask pattern displacement seems to be changed by breaking the Si-O bonds. A SiN membrane with an oxygen concentration below 1% is found to be stable under X-ray irradiation at a dosage of up to 5 kJ/cm2. Consequently, control of the oxygen concentration during the LPCVD process is vital to obtain high durability SiN X-ray masks. © 1990 IOP Publishing Ltd.

引用

页码：2199 / 2202

页数：4

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