DIFFUSION-COEFFICIENT OF INTERSTITIAL IRON IN SILICON

被引：40

作者：

ISOBE, T

NAKASHIMA, H

HASHIMOTO, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 07期

关键词：

D O I：

10.1143/JJAP.28.1282

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1282 / 1283

页数：2

共 8 条

[1]

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[2]

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[6] ANNEALING OF SUPERSATURATED COBALT IN SILICON [J].

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[8] TRANSITION-METALS IN SILICON [J].

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