DIFFUSION PIPES IN SILICON NPN STRUCTURES

被引：51

作者：

BARSON, F

HESS, MS

ROY, MM

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 02期

关键词：

D O I：

10.1149/1.2411820

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：304 / &

共 12 条

[1]

ARMSTRONG WJ, 1966, ELECTROCHEM TECHNOL, V4, P475

[2] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) :1193-1195

[3] CROSS SECTIONS AND OHMIC RESISTANCE OF DIFFUSION PIPES IN SILICON [J].

GOETZBERGER, A ;

STEPHENS, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (07) :604-607

[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[5] PROCESS-INTRODUCED STRUCTURAL DEFECTS AND JUNCTION CHARACTERISTICS IN NPN SILICON EPITAXIAL PLANAR TRANSISTORS [J].

JUNGBLUT.ED ;

WANG, P .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) :1967-&

[6] ELECTRICAL PROPERTIES OF COPPER SEGREGATES IN SILICON P-N JUNCTIONS [J].

LAWRENCE, JE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) :796-&

[7] CONTROL OF DIFFUSION INDUCED DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON [J].

MCDONALD, RA ;

EHLENBERGER, GG ;

HUFFMAN, TR .

SOLID-STATE ELECTRONICS, 1966, 9 (08) :807-+

[8]

PAVLOV PV, 1964, SOV PHYS-SOL STATE, V6, P305

[9]

Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[10]

QUEISSER HJ, 1960, PHYS REV, V123, P1245

← 1 2 →