POISSON-PROCESS AND INTEGRATED-CIRCUIT YIELD PREDICTION

被引:13
作者
HEMMERT, RS
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关键词
D O I
10.1016/0038-1101(81)90069-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:511 / 515
页数:5
相关论文
共 13 条
[1]   YIELD ANALYSIS OF LARGE INTEGRATED CIRCUIT CHIPS [J].
GUPTA, A ;
LATHROP, JW .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) :389-&
[2]   SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].
HOFSTEIN, SR ;
HEIMAN, FP .
PROCEEDINGS OF THE IEEE, 1963, 51 (09) :1190-&
[3]  
HU SM, 1979, SOLID STATE ELECTRON, V22, P205, DOI 10.1016/0038-1101(79)90114-X
[4]  
MADLAND GR, 1966, ELECTRON IND APR, P40
[5]  
MOORE GE, 1970, ELECTRONICS, V43, P126
[6]   COST-SIZE OPTIMA OF MONOLITHIC INTEGRATED CIRCUITS [J].
MURPHY, BT .
PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1537-&
[7]   A NEW LOOK AT YIELD OF INTEGRATED CIRCUITS [J].
PRICE, JE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08) :1290-&
[8]   COMPOSITE MODEL TO IC YIELD PROBLEM [J].
STAPPER, CH .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (06) :537-539
[9]   LSI YIELD MODELING AND PROCESS MONITORING [J].
STAPPER, CH .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1976, 20 (03) :228-234
[10]  
STAPPER CH, 1967, IEEE INT CONV REC, V6, P60