INFLUENCE OF HEAT-TREATMENT ON THE FORMATION OF RECOMBINATION CENTERS IN ISOVALENTLY DOPED ZNSE-TE CRYSTALS

被引：0

作者：

RYZHIKOV, VD

GAVRYUSHIN, VI

KAZLAUSKAS, A

RACHYUKAITIS, G

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1991年 / 25卷 / 05期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An investigation was made of the photoluminescence and laser-induced impurity-defect absorption of light in isovalently doped ZnSe:Te single crystals annealed in the vapors of their components. The dynamics of the composition of deep centers was investigated as a function of the conditions during heat treatment and this made it possible to account for the changes in the radiative recombination efficiency of photoluminescence bands. A spectral analysis was made of the components of the photoinduced absorption, which was manifested after annealing in selenium and tellurium vapor and resulted in quenching of the majority of the luminescence bands. The results of this analysis were used to propose a configurational model of nonradiative recombination centers with a strong phonon energy dissipation mechanism.

引用

页码：509 / 512

页数：4

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