NEUTRON PRODUCED TRAPPING CENTERS IN JUNCTION FIELD EFFECT TRANSISTORS

被引：33

作者：

GREGORY, BL

NAIK, SS

OLDHAM, WG

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1971年 / NS18卷 / 06期

关键词：

D O I：

10.1109/TNS.1971.4326413

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：50 / +

页数：1

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