SWITCHING AND MEMORY IN ZNSE-GE HETEROJUNCTIONS

被引：49

作者：

HOVEL, HJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 04期

关键词：

D O I：

10.1063/1.1653340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：141 / &

共 10 条

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[7]

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[8] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES [J].

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[9]

PEARSON AD, 1969, IBM J RES DEVELOP, V13, P515

[10] BULK AND THIN FILM SWITCHING AND MEMORY EFFECTS IN SEMICONDUCTING CHALCOGENIDE GLASSES [J].

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