EXTREMELY WIDE MODULATION BANDWIDTH IN A LOW THRESHOLD CURRENT STRAINED QUANTUM WELL LASER

被引:177
作者
SUEMUNE, I
COLDREN, LA
YAMANISHI, M
KAN, Y
机构
关键词
D O I
10.1063/1.99984
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1378 / 1380
页数:3
相关论文
共 22 条
[1]   BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].
ADAMS, AR .
ELECTRONICS LETTERS, 1986, 22 (05) :249-250
[2]   QUANTUM-WELL LASERS GAIN, SPECTRA, DYNAMICS [J].
ARAKAWA, Y ;
YARIV, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1887-1899
[3]  
CASEY HC, 1978, HETEROSTRUCTURE LASE, pCH3
[4]   MODIFICATION OF OPTICAL-PROPERTIES OF GAAS-GA1-XALXAS SUPER-LATTICES DUE TO BAND MIXING [J].
CHANG, YC ;
SCHULMAN, JN .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :536-538
[5]  
FASOLINO A, 1984, 2 DIMENSIONAL SYSTEM, P176
[6]   RIDGE WAVE-GUIDE INJECTION-LASER WITH A GALNAS STRAINED-LAYER QUANTUM-WELL (LAMBDA=1-MU-M) [J].
FISCHER, SE ;
FEKETE, D ;
FEAK, GB ;
BALLANTYNE, JM .
APPLIED PHYSICS LETTERS, 1987, 50 (12) :714-716
[7]   CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J].
GOURLEY, PL ;
FRITZ, IJ ;
DAWSON, LR .
APPLIED PHYSICS LETTERS, 1988, 52 (05) :377-379
[8]  
Harrison W. A., 1980, ELECT STRUCTURE PROP
[9]  
HESS K, 1976, 13TH P INT C PHYS SE, P142
[10]  
LAU KY, 1985, IEEE J QUANTUM ELECT, V21, P121