PARTIAL SATURATION OF THE CONDUCTION-BAND TAIL IN DOPED A-SI-H

被引:1
作者
KRISTENSEN, IK
HVAM, JM
机构
[1] Odense Univ, Odense M, Den, Odense Univ, Odense M, Den
关键词
CRYSTALS - Physical Properties;
D O I
10.1016/0038-1098(88)90728-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The temperature and excitation density dependence of transient photocurrents in lightly doped a-Si:H reveals partial saturation of an exponential conduction band tail with a characteristic width of 40 mev.
引用
收藏
页码:415 / 417
页数:3
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