GENERATION OF STACKING-FAULTS AND DISLOCATION LOOPS IN SILICON WAFERS

被引：11

作者：

PRUSSIN, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 02期

关键词：

D O I：

10.1063/1.1661189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：733 / &

共 11 条

[1] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J].

BOOKER, GR ;

TUNSTALL, WJ .

PHILOSOPHICAL MAGAZINE, 1966, 13 (121) :71-&

[2] 2-DIMENSIONAL DEFECTS IN SILICON AFTER ANNEALING IN WET OXYGEN [J].

BOOKER, GR ;

STRICKLE.R .

PHILOSOPHICAL MAGAZINE, 1965, 11 (114) :1303-&

[3] SILICON DEFECT STRUCTURE INDUCED BY ARSENIC DIFFUSION AND SUBSEQUENT STEAM OXIDATION [J].

DASH, S ;

JOSHI, ML .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) :453-&

[4]

FISHER AW, 1966, J ELECTROCHEM SOC, V113, P1054

[5] STACKING FAULTS IN STEAM-OXIDIZED SILICON [J].

JOSHI, ML .

ACTA METALLURGICA, 1966, 14 (10) :1157-&

[6]

LAURENCE JE, 1969, J APPL PHYS, V40, P360

[7]

MAYER A, 1970, RCA REV, V31, P414

[8] GROWTH OF LATTICE DEFECTS IN SILICON DURING OXIDATION [J].

QUEISSER, HJ ;

VANLOON, PGG .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) :3066-&

[9] OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON [J].

SANDERS, IR ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE, 1969, 20 (167) :881-&

[10] SURFACE DAMAGE AND COPPER PRECIPITATION IN SILICON [J].

THOMAS, DJD .

PHYSICA STATUS SOLIDI, 1963, 3 (12) :2261-2273

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