PRECIPITATION IN SILICON CRYSTALS CONTAINING ALUMINUM

被引:20
作者
BULLOUGH, R
NEWMAN, RC
WAKEFIELD, J
WILLIS, JB
机构
关键词
D O I
10.1063/1.1735673
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:707 / 714
页数:8
相关论文
共 29 条
[1]   THE PREPARATION OF SINGLE-CRYSTAL INGOTS OF SILICON BY THE PULLING TECHNIQUE [J].
BILLIG, E ;
GASSON, DB .
JOURNAL OF SCIENTIFIC INSTRUMENTS, 1958, 35 (10) :360-365
[2]   PRECIPITATION ON A DISLOCATION [J].
BULLOUGH, R ;
NEWMAN, RC ;
WAKEFIELD, J ;
WILLIS, JB .
NATURE, 1959, 183 (4653) :34-35
[3]   THE FLOW OF IMPURITIES TO AN EDGE DISLOCATION [J].
BULLOUGH, R ;
NEWMAN, RC .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1258) :427-440
[4]  
BULLOUGH R, 1959, P IEE B S15, V106, P277
[5]   NUCLEATION ON DISLOCATIONS [J].
CAHN, JW .
ACTA METALLURGICA, 1957, 5 (03) :169-172
[6]  
CANALSFRAU D, 1958, OPT ACTA, V5, P15
[7]  
Carslaw H. S., 1959, CONDUCTION HEAT SOLI
[8]  
Dash W., 1958, GROWTH PERFECTION CR
[9]   COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].
DASH, WC .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) :1193-1195
[10]   EVIDENCE OF DISLOCATION JOGS IN DEFORMED SILICON [J].
DASH, WC .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (04) :705-709