OBSERVATION OF ION-IMPLANTATION-DAMAGE-CREATED N-TYPE CONDUCTIVITY IN INP AFTER HIGH-TEMPERATURE ANNEALING

The conductivity and the impurity profiles of InP implanted with dopant ions (Si,Be) or non dopant ions (B,H,N,O,P) have been investigated. Experiments have been done in substrates with and without Fe doping. Low-temperature, short-time annealing of implanted Si and Be reveals an n-type distribution of carriers which cannot be accounted for on the basis of implant activation. In order to examine the contribution without the carriers originating from the dopant ions, the behavior of electrically inactive B, H, N, O, and P, implants was investigated. Implantation of these ions into semi-insulating InP introduced n-type doping in the 1 X 10(16) cm3 range after an anneal above 450-degrees-C. For H, O, N, and P ions, the n-type conductivity could be eliminated by annealing at higher temperatures. However, boron anneals up to 750-degrees-C did not eliminate the n-type conductivity. The n-type carrier profiles tracked the ion profiles. The carrier profile is influenced by the redistribution of the Fe during annealing; however, the Fe motion cannot explain the n-type conductivity. This conductivity may be due to a complex formed above 450-degrees-C.