SELECTIVE ETCHING OF GAAS AND AL0.30GA0.70AS WITH CITRIC-ACID HYDROGEN-PEROXIDE SOLUTIONS

被引:75
|
作者
JUANG, C
KUHN, KJ
DARLING, RB
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 05期
关键词
D O I
10.1116/1.584928
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1122 / 1124
页数:3
相关论文
共 35 条
  • [21] Highly selective etching of GaAs on Al0.2Ga0.8As using citric acid/H2O2/H2O etching system
    Liao, CI
    Houng, MP
    Wang, YH
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (11) : C129 - C132
  • [22] Selective wet etching of a GaAs/AlxGa1-xAs heterostructure with citric acid - hydrogen peroxide solutions for pseudomorphic GaAs/AlxGa1-xAs/InyGa1-yAs heterojunction field effect transistor fabrication
    Lee, H.J.
    Tse, M.S.
    Radhakrishnan, K.
    Prasad, K.
    Weng, J.
    Yoon, S.F.
    Zhou, X.
    Tan, H.S.
    Ting, S.K.
    Leong, Y.C.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1995, B35 (1-3): : 230 - 233
  • [23] FUNDAMENTAL-STUDY ON THE SELECTIVE ETCHING OF AL0.25GA0.75AS VERSUS GAAS IN ACIDIC IODINE SOLUTIONS
    VERPOORT, PJ
    VERMEIR, IE
    GOMES, WP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (10) : 3589 - 3595
  • [24] SELECTIVE SYNTHESIS OF TARTARIC ACID FROM MALEATE SOLUTIONS CONTAINING HYDROGEN-PEROXIDE USING AN EXCIMER-LASER
    SHIMIZU, Y
    KAWANISHI, S
    SUZUKI, N
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1994, 208 : 238 - ORGN
  • [25] Selective wet etching of a GaAs/AlxGa1-xAs heterostructure with citric acid-hydrogen peroxide solutions for pseudomorphic GaAs/AlxGa1-xAs/InyGa1-y heterojunction field effect transistor fabrication
    Lee, HJ
    Tse, MS
    Radhakrishnan, K
    Prasad, K
    Weng, J
    Yoon, SF
    Zhou, X
    Tan, HS
    Ting, SK
    Leong, YC
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3): : 230 - 233
  • [26] Gate recessing optimization of GaAs/Al0.22Ga0.78As heterojunction field effect transistor using citric acid hydrogen peroxide ammonium hydroxide for power applications
    Hue, X
    Boudart, B
    Crosnier, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (05): : 2675 - 2679
  • [27] High Selective Etching GaAs/Al0.3Ga0.7As for the High Electron Mobility Transistor (HEMT) Applications Using Citric Buffer Solution
    Sandesh, Shanmukha
    Kumar, Ch. Ravi
    Rajaram, Guruswamy
    2015 International Conference on Communication, Information & Computing Technology (ICCICT), 2015,
  • [28] Selective wet etching of lattice-matched InGaAs/InAlAs on InP and metamorphic InGaAs/InAlAs on GaAs using succinic acid hydrogen peroxide solution
    Fourre, H
    Diette, F
    Cappy, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (05): : 3400 - 3402
  • [29] Feature size and density effects in wet selective etching of GaAs/AlAs p-HEMT structures with organic acid-peroxide solutions.
    Kulkarni, VS
    Prasad, K
    Quinn, W
    Spooner, F
    Sung, CM
    PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS III - ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2004, 799 : 217 - 222
  • [30] Very high selective etching of GaAs/Al0.2Ga0.8As for gate recess process to pseudomorphic high electron mobility transistors (PHEMT) applications using citric buffer solution
    Liao, CI
    Sze, PW
    Houng, MP
    Wang, YH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (6B): : L800 - L802