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SELECTIVE ETCHING OF GAAS AND AL0.30GA0.70AS WITH CITRIC-ACID HYDROGEN-PEROXIDE SOLUTIONS
被引:75
作者
:
JUANG, C
论文数:
0
引用数:
0
h-index:
0
JUANG, C
KUHN, KJ
论文数:
0
引用数:
0
h-index:
0
KUHN, KJ
DARLING, RB
论文数:
0
引用数:
0
h-index:
0
DARLING, RB
机构
:
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
1990年
/ 8卷
/ 05期
关键词
:
D O I
:
10.1116/1.584928
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1122 / 1124
页数:3
相关论文
共 7 条
[1]
KENEFICK K, 1982, J ELECTROCHEM SOC, V129, P2380, DOI 10.1149/1.2123532
[2]
AN IMPROVED TECHNIQUE FOR SELECTIVE ETCHING OF GAAS AND GA1-XALXAS
[J].
LEPORE, JJ
论文数:
0
引用数:
0
h-index:
0
LEPORE, JJ
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(12)
:6441
-6442
[3]
EXTREMELY LOW-INTENSITY OPTICAL NONLINEARITY IN ASYMMETRIC COUPLED QUANTUM-WELLS
[J].
LITTLE, JW
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0
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0
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LITTLE, JW
;
WHISNANT, JK
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0
引用数:
0
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WHISNANT, JK
;
LEAVITT, RP
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LEAVITT, RP
;
WILSON, RA
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WILSON, RA
.
APPLIED PHYSICS LETTERS,
1987,
51
(22)
:1786
-1788
[4]
OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS
[J].
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
LOGAN, RA
;
REINHART, FK
论文数:
0
引用数:
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机构:
BELL LABS,MURRAY HILL,NJ 07974
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REINHART, FK
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(09)
:4172
-4176
[5]
ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES
[J].
MILLER, DAB
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0
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机构:
AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
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;
CHEMLA, DS
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AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
CHEMLA, DS
;
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AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
DAMEN, TC
;
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0
机构:
AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
GOSSARD, AC
;
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引用数:
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AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
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:1043
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[6]
PREFERENTIAL ETCHING OF GAAS THROUGH PHOTORESIST MASKS
[J].
OTSUBO, M
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0
引用数:
0
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机构:
MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN
MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN
OTSUBO, M
;
ODA, T
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MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN
ODA, T
;
KUMABE, H
论文数:
0
引用数:
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机构:
MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN
MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN
KUMABE, H
;
MIKI, H
论文数:
0
引用数:
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h-index:
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机构:
MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN
MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN
MIKI, H
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(05)
:676
-680
[7]
THE RESONANT-TUNNELING FIELD-EFFECT TRANSISTOR - A NEW NEGATIVE TRANSCONDUCTANCE DEVICE
[J].
SEN, S
论文数:
0
引用数:
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SEN, S
;
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;
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;
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.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1987,
34
(08)
:1768
-1773
←
1
→
共 7 条
[1]
KENEFICK K, 1982, J ELECTROCHEM SOC, V129, P2380, DOI 10.1149/1.2123532
[2]
AN IMPROVED TECHNIQUE FOR SELECTIVE ETCHING OF GAAS AND GA1-XALXAS
[J].
LEPORE, JJ
论文数:
0
引用数:
0
h-index:
0
LEPORE, JJ
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(12)
:6441
-6442
[3]
EXTREMELY LOW-INTENSITY OPTICAL NONLINEARITY IN ASYMMETRIC COUPLED QUANTUM-WELLS
[J].
LITTLE, JW
论文数:
0
引用数:
0
h-index:
0
LITTLE, JW
;
WHISNANT, JK
论文数:
0
引用数:
0
h-index:
0
WHISNANT, JK
;
LEAVITT, RP
论文数:
0
引用数:
0
h-index:
0
LEAVITT, RP
;
WILSON, RA
论文数:
0
引用数:
0
h-index:
0
WILSON, RA
.
APPLIED PHYSICS LETTERS,
1987,
51
(22)
:1786
-1788
[4]
OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS
[J].
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
LOGAN, RA
;
REINHART, FK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
REINHART, FK
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(09)
:4172
-4176
[5]
ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES
[J].
MILLER, DAB
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
MILLER, DAB
;
CHEMLA, DS
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
CHEMLA, DS
;
DAMEN, TC
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
DAMEN, TC
;
GOSSARD, AC
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
GOSSARD, AC
;
WIEGMANN, W
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
WIEGMANN, W
;
WOOD, TH
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
WOOD, TH
;
BURRUS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
BURRUS, CA
.
PHYSICAL REVIEW B,
1985,
32
(02)
:1043
-1060
[6]
PREFERENTIAL ETCHING OF GAAS THROUGH PHOTORESIST MASKS
[J].
OTSUBO, M
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN
MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN
OTSUBO, M
;
ODA, T
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN
MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN
ODA, T
;
KUMABE, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN
MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN
KUMABE, H
;
MIKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN
MITSUBISHI ELECT CORP, CENT RES LAB, ITAMI, HYOGO, JAPAN
MIKI, H
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(05)
:676
-680
[7]
THE RESONANT-TUNNELING FIELD-EFFECT TRANSISTOR - A NEW NEGATIVE TRANSCONDUCTANCE DEVICE
[J].
SEN, S
论文数:
0
引用数:
0
h-index:
0
SEN, S
;
CAPASSO, F
论文数:
0
引用数:
0
h-index:
0
CAPASSO, F
;
BELTRAM, F
论文数:
0
引用数:
0
h-index:
0
BELTRAM, F
;
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1987,
34
(08)
:1768
-1773
←
1
→