OPERATING CHARACTERISTICS OF INGAAS/AIGAAS STRAINED SINGLE QUANTUM WELL LASERS

被引：35

作者：

BOUR, DP

MARTINELLI, RU

GILBERT, DB

ELBAUM, L

HARVEY, MG

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 15期

关键词：

D O I：

10.1063/1.101590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1501 / 1503

页数：3

共 19 条

[1] AUGER RECOMBINATION IN LOW-DIMENSIONAL STRUCTURES [J].

ABRAM, RA ;

KELSALL, RW ;

TAYLOR, RI .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1988, 49 (06) :607-613

[2]

Agrawal G. P., 1986, LONG WAVELENGTH SEMI, P113

[3] CONTINUOUS, HIGH-POWER OPERATION OF A STRAINED INGAAS/ALGAAS QUANTUM WELL LASER [J].

BOUR, DP ;

GILBERT, DB ;

ELBAUM, L ;

HARVEY, MG .

APPLIED PHYSICS LETTERS, 1988, 53 (24) :2371-2373

[4] HIGH-POWER CONVERSION EFFICIENCY IN A STRAINED INGAAS/ALGAAS QUANTUM WELL LASER [J].

BOUR, DP ;

EVANS, GA ;

GILBERT, DB .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) :3340-3343

[5] A MODEL FOR GRIN-SCH-SQW DIODE-LASERS [J].

CHINN, SR ;

ZORY, PS ;

REISINGER, AR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (11) :2191-2214

[6] CALCULATION OF AUGER RATES IN A QUANTUM WELL STRUCTURE AND ITS APPLICATION TO INGAASP QUANTUM WELL LASERS [J].

DUTTA, NK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1236-1245

[7]

Evans G.B., UNPUB

[8] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FEKETA, D ;

CHAN, KT ;

BALLANTYNE, JM ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1986, 49 (24) :1659-1660

[9] RIDGE WAVE-GUIDE INJECTION-LASER WITH A GALNAS STRAINED-LAYER QUANTUM-WELL (LAMBDA=1-MU-M) [J].

FISCHER, SE ;

FEKETE, D ;

FEAK, GB ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :714-716

[10] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J].

GOURLEY, PL ;

FRITZ, IJ ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :377-379

← 1 2 →