VARIATION OF CONTACT RESISTANCE OF METAL-GAAS CONTACTS WITH IMPURITY CONCENTRATION AND ITS DEVICE IMPLICATION

被引:22
作者
KLOHN, KL
WANDINGE.L
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D O I
10.1149/1.2411927
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:507 / &
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[12]   LOW-TEMPERATURE ALLOY CONTACTS TO GALLIUM ARSENIDE USING METAL HALIDE FLUXES [J].
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SOLID-STATE ELECTRONICS, 1966, 9 (09) :859-&
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