FABRICATION AND ELECTRICAL-PROPERTIES OF EPITAXIAL LAYERS OF GAAS DOPED WITH MANGANESE

被引：14

作者：

GOUSKOV, L ^{[1
]}

BILAC, S ^{[1
]}

PIMENTEL, J ^{[1
]}

GOUSKOV, A ^{[1
]}

机构：

[1] UNIV ESTADUAL CAMPINAS, INST FIS GLEB WATAGHIN, CAMPINAS, SP, BRAZIL

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 08期

关键词：

D O I：

10.1016/0038-1101(77)90039-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：653 / 656

页数：4

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