LOW-FREQUENCY FLUCTUATION OF THE TRANSPORT FACTOR IN JUNCTION TRANSISTORS

被引：0
作者：
TAKAGI, K
MIZUNAMI, T
YANG, SY
WADA, M
机构：
[1] Department of Electronics, Kyushu Institute of Technology, Tobata
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9A期
关键词：
1/F NOISE; LOW FREQUENCY; CURRENT DEPENDENCE; TRANSPORT FACTOR; JUNCTION TRANSISTOR;
D O I：
10.1143/JJAP.32.3782
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Noise analysis is carried out in a junction transistor. It is shown that the transport factor of the transistor fluctuates in proportion to the 3/2 power of the current at low frequency. This is derived from the base width modulation caused by mobility fluctuation in the collector space-charge region.
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页码：3782 / 3783
页数：2
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