SCALING RELATIONS FOR ELECTRON-HOLE-DROPLET CONDENSATION IN SEMICONDUCTORS

被引：39

作者：

REINECKE, TL ^{[1
]}

YING, SC ^{[1
]}

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 43卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.43.1054

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is pointed out that scaling relations suggested previously between the critical and ground-state properties of electron-hole droplets lack theoretical justification; by detailed calculations for model systems with widely varying band structure, these relations are shown not to be satisfied. New scaling relations are proposed, and their existence is traced to systematic trends in the band structure and the exchange-correlation energy of the electron-hole system. © 1979 The American Physical Society.

引用

页码：1054 / 1057

页数：4

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