TRANSISTOR THERMAL-RESISTANCE MEASUREMENT USING ULTRALINEAR-THERMOMETER PRINCIPLE

被引：0

作者：

AMBROZY, A

机构：

[1] Department of Electron Devices Technical University

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 05期

关键词：

D O I：

10.1049/el:19690073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To determine the transistor thermal resistance, one of the temperature-dependent parameters of the transistor (e.g. Veb) must be measured. Unfortunately, this also depends on Van, which alters, changing the heating power. A relatively simple and accurate & Veb method is proposed, insensitive to collector-voltage variations. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：100 / &