共 29 条
CORRELATION OF TRAP CREATION WITH ELECTRON HEATING IN SILICON DIOXIDE
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DIMARIA, DJ
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10.1063/1.98324
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O59 [应用物理学];
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页码:655 / 657
页数:3
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共 29 条
[1]
CURRENT INDUCED TRAP GENERATION IN SIO2
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EITAN, B
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APPLIED PHYSICS LETTERS,
1982, 40 (05)
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BADIHI, A
论文数: 0 引用数: 0
h-index: 0

EITAN, B
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h-index: 0

COHEN, I
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SHAPPIR, J
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DIRECT MEASUREMENT OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS IN SILICON DIOXIDE
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BRORSON, SD
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DIMARIA, DJ
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FISCHETTI, MV
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PESAVENTO, FL
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SOLOMON, PM
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DONG, DW
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JOURNAL OF APPLIED PHYSICS,
1985, 58 (03)
:1302-1313

BRORSON, SD
论文数: 0 引用数: 0
h-index: 0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

DIMARIA, DJ
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IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

FISCHETTI, MV
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h-index: 0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

PESAVENTO, FL
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h-index: 0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

SOLOMON, PM
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IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

DONG, DW
论文数: 0 引用数: 0
h-index: 0
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IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
[3]
LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING
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DIMARIA, DJ
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1977, 48 (03)
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DIMARIA, DJ
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h-index: 0
机构:
THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598 THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

WEINBERG, ZA
论文数: 0 引用数: 0
h-index: 0
机构:
THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598 THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

AITKEN, JM
论文数: 0 引用数: 0
h-index: 0
机构:
THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598 THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
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ELECTRON HEATING STUDIES IN SILICON DIOXIDE - LOW FIELDS AND THICK-FILMS
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DIMARIA, DJ
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FISCHETTI, MV
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ARIENZO, M
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1986, 60 (05)
:1719-1726

DIMARIA, DJ
论文数: 0 引用数: 0
h-index: 0

FISCHETTI, MV
论文数: 0 引用数: 0
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ARIENZO, M
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TIERNEY, E
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DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES
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DIMARIA, DJ
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JOURNAL OF APPLIED PHYSICS,
1976, 47 (09)
:4073-4077

DIMARIA, DJ
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h-index: 0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598 IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[6]
DIRECT OBSERVATION OF THE THRESHOLD FOR ELECTRON HEATING IN SILICON DIOXIDE
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DIMARIA, DJ
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FISCHETTI, MV
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TIERNEY, E
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BRORSON, SD
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PHYSICAL REVIEW LETTERS,
1986, 56 (12)
:1284-1286

DIMARIA, DJ
论文数: 0 引用数: 0
h-index: 0
机构:
MIT,CAMBRIDGE,MA 02139 MIT,CAMBRIDGE,MA 02139

FISCHETTI, MV
论文数: 0 引用数: 0
h-index: 0
机构:
MIT,CAMBRIDGE,MA 02139 MIT,CAMBRIDGE,MA 02139

TIERNEY, E
论文数: 0 引用数: 0
h-index: 0
机构:
MIT,CAMBRIDGE,MA 02139 MIT,CAMBRIDGE,MA 02139

BRORSON, SD
论文数: 0 引用数: 0
h-index: 0
机构:
MIT,CAMBRIDGE,MA 02139 MIT,CAMBRIDGE,MA 02139
[7]
CHARGE TRANSPORT AND TRAPPING PHENOMENA IN OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS
[J].
DIMARIA, DJ
;
DONG, DW
;
FALCONY, C
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THEIS, TN
;
KIRTLEY, JR
;
TSANG, JC
;
YOUNG, DR
;
PESAVENTO, FL
;
BRORSON, SD
.
JOURNAL OF APPLIED PHYSICS,
1983, 54 (10)
:5801-5827

DIMARIA, DJ
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, CAMBRIDGE, MA 02139 USA MIT, CAMBRIDGE, MA 02139 USA

DONG, DW
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, CAMBRIDGE, MA 02139 USA MIT, CAMBRIDGE, MA 02139 USA

FALCONY, C
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, CAMBRIDGE, MA 02139 USA MIT, CAMBRIDGE, MA 02139 USA

THEIS, TN
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, CAMBRIDGE, MA 02139 USA MIT, CAMBRIDGE, MA 02139 USA

KIRTLEY, JR
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, CAMBRIDGE, MA 02139 USA MIT, CAMBRIDGE, MA 02139 USA

TSANG, JC
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, CAMBRIDGE, MA 02139 USA MIT, CAMBRIDGE, MA 02139 USA

YOUNG, DR
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, CAMBRIDGE, MA 02139 USA MIT, CAMBRIDGE, MA 02139 USA

PESAVENTO, FL
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, CAMBRIDGE, MA 02139 USA MIT, CAMBRIDGE, MA 02139 USA

BRORSON, SD
论文数: 0 引用数: 0
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机构:
MIT, CAMBRIDGE, MA 02139 USA MIT, CAMBRIDGE, MA 02139 USA
[8]
DIRECT OBSERVATION OF BALLISTIC ELECTRONS IN SILICON DIOXIDE
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DIMARIA, DJ
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DORI, L
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TIERNEY, E
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STASIAK, J
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PHYSICAL REVIEW LETTERS,
1986, 57 (25)
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DIMARIA, DJ
论文数: 0 引用数: 0
h-index: 0

FISCHETTI, MV
论文数: 0 引用数: 0
h-index: 0

BATEY, J
论文数: 0 引用数: 0
h-index: 0

DORI, L
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h-index: 0

TIERNEY, E
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STASIAK, J
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ELECTRON HEATING IN SILICON DIOXIDE AND OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS
[J].
DIMARIA, DJ
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THEIS, TN
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KIRTLEY, JR
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PESAVENTO, FL
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DONG, DW
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BRORSON, SD
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JOURNAL OF APPLIED PHYSICS,
1985, 57 (04)
:1214-1238

DIMARIA, DJ
论文数: 0 引用数: 0
h-index: 0
机构:
MIT,CAMBRIDGE,MA 02139 MIT,CAMBRIDGE,MA 02139

THEIS, TN
论文数: 0 引用数: 0
h-index: 0
机构:
MIT,CAMBRIDGE,MA 02139 MIT,CAMBRIDGE,MA 02139

KIRTLEY, JR
论文数: 0 引用数: 0
h-index: 0
机构:
MIT,CAMBRIDGE,MA 02139 MIT,CAMBRIDGE,MA 02139

PESAVENTO, FL
论文数: 0 引用数: 0
h-index: 0
机构:
MIT,CAMBRIDGE,MA 02139 MIT,CAMBRIDGE,MA 02139

DONG, DW
论文数: 0 引用数: 0
h-index: 0
机构:
MIT,CAMBRIDGE,MA 02139 MIT,CAMBRIDGE,MA 02139

BRORSON, SD
论文数: 0 引用数: 0
h-index: 0
机构:
MIT,CAMBRIDGE,MA 02139 MIT,CAMBRIDGE,MA 02139
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PARAMETER DEPENDENCE OF RIE INDUCED RADIATION-DAMAGE IN SILICON DIOXIDE
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EPHRATH, LM
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1981, 128 (11)
:2415-2419

EPHRATH, LM
论文数: 0 引用数: 0
h-index: 0

DIMARIA, DJ
论文数: 0 引用数: 0
h-index: 0

PESAVENTO, FL
论文数: 0 引用数: 0
h-index: 0