ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING

被引：80
作者：
AKIYAMA, T
UJIHIRA, Y
OKABE, Y
SUGANO, T
NIKI, E
机构：
[1] UNIV TOKYO,FAC ENGN,DEPT IND CHEM,BUNKYO KU,TOKYO 113,JAPAN
[2] UNIV TOKYO,DEPT ELECT & ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
[3] INST VOCAT TRAINING,SAGAMIHARA,JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 12期
关键词：
D O I：
10.1109/T-ED.1982.21054
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1936 / 1941
页数：6
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