SPIRAL GROWTH OF INP BY METALORGANIC VAPOR-PHASE EPITAXY

Spirals were observed on InP grown by metalorganic vapor phase epitaxy. Atomic force microscopy is the technique used. The growth took place on a vicinal surface and the growth mechanism is according to the classical Burton-Cabrera-Frank theory. Spirals originate from screw dislocations. Successive turns of steps are sent out by the dislocations. These steps are generally of monolayer height (0.29 nm) except close to the dislocation emergence points where they are submonolayers. It is predicted that spiral growth will become the dominant mechanism if the vicinal steps are eliminated.