Read and Write Analysis for Balanced Pattern Memristor Crossbar Array

被引：0

作者：

Sharma, Arun Kant ^{[1
]}

Asapu, Shiva ^{[1
]}

Salimath, Akshaykumar ^{[1
]}

Ghosh, Bahniman ^{[1
,2
]}

机构：

[1] Indian Inst Technol Kanpur, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India

[2] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

来源：

JOURNAL OF LOW POWER ELECTRONICS | 2014年 / 10卷 / 01期

关键词：

Memristor; Balanced Crossbar Array;

D O I：

10.1166/jolpe.2014.1298

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we try to access all possible memory combinations in a memristor crossbar array, reduce the effect of sneak path currents and also make read faster and simpler. For this, we analyze a balanced pattern architecture using a memristive crossbar array and also propose an effective read technique. We aim at reducing the problem of variability in the sneak path currents. Also from the read technique proposed, we reduce the measurements to read memory from the array.

引用

页码：84 / 87

页数：4

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