CHARGE COLLECTION AND SEU SENSITIVITY FOR GA/AS BIPOLAR-DEVICES

被引：6

作者：

YAKTIEEN, MH ^{[1
]}

MCNULTY, PJ ^{[1
]}

LYNCH, JE ^{[1
]}

ROTH, DR ^{[1
]}

SALZMAN, JF ^{[1
]}

YUAN, JH ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2300 / 2304

页数：5

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[2] CHARGE COLLECTION IN HI2L BIPOLAR-TRANSISTORS
MCNULTY, PJ
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WEBER, WM
YUAN, HT
SALZMAN, JF
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) : 1613 - 1618
[3] COSMIC-RAY-INDUCED ERRORS IN MOS DEVICES
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[4] INTRINSIC SEU REDUCTION FROM USE OF HETEROJUNCTIONS IN GALLIUM-ARSENIDE BIPOLAR CIRCUITS
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MCNULTY, PJ
KNUDSON, AR
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1676 - 1679
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