ENHANCEMENT-MODE ION-IMPLANTED INP FETS

被引：10
|
作者：
GLEASON, KR
DIETRICH, HB
BARK, ML
HENRY, RL
机构：
来源：
ELECTRONICS LETTERS | 1978年 / 14卷 / 19期
关键词：
D O I：
10.1049/el:19780432
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：643 / 644
页数：2
相关论文
共 50 条
  • [1] FULLY ION-IMPLANTED INP JUNCTION FETS
    BOOS, JB
    DIETRICH, HB
    WENG, TH
    SLEGER, KJ
    BINARI, SC
    HENRY, RL
    ELECTRON DEVICE LETTERS, 1982, 3 (09): : 256 - 258
  • [2] LOW-NOISE ION-IMPLANTED INP FETS
    SLEGER, KJ
    DIETRICH, HB
    BARK, ML
    SWIGGARD, EM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1031 - 1034
  • [3] PLANAR FULLY ION-IMPLANTED INP POWER JUNCTION FETS
    BOOS, JB
    BINARI, SC
    KELNER, G
    THOMPSON, PE
    WENG, TH
    PAPANICOLAOU, NA
    HENRY, RL
    IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 273 - 276
  • [4] INVESTIGATION OF THRESHOLD VOLTAGE VARIATIONS OF ION-IMPLANTED DEPLETION AND ENHANCEMENT-MODE MOSFET DEVICES
    NETHERTON, SW
    OLESZEK, GM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C101 - C101
  • [5] HETEROJUNCTION ION-IMPLANTED FETS (HIFETS)
    WANG, GW
    FENG, M
    LIAW, YP
    KALISKI, R
    LAU, CL
    CHANG, Y
    ITO, C
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2609 - 2609
  • [6] HETEROSTRUCTURE GATES FOR ENHANCEMENT-MODE INGAAS FETS
    FEUER, MD
    CHANG, TY
    SHUNK, SC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1840 - 1840
  • [7] DEFECT RECOVERY OF ION-IMPLANTED INP
    WEYER, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 315 - 318
  • [8] ELECTROCHEMICAL PROFILING OF ION-IMPLANTED INP
    BAHIR, G
    MERZ, JL
    ABELSON, JR
    SIGMON, TW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : 2187 - 2193
  • [9] PLANAR, FULLY ION-IMPLANTED INP JUNCTION FETS WITH A NITRIDE-REGISTERED GATE METALLIZATION
    BOOS, JB
    KRUPPA, W
    MOLNAR, B
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (02) : 79 - 81
  • [10] THRESHOLD VOLTAGE AND GAIN TERM BETA OF ION-IMPLANTED ENHANCEMENT-MODE N-CHANNEL MOS-TRANSISTORS
    KAMOSHID.M
    APPLIED PHYSICS LETTERS, 1973, 22 (08) : 404 - 405
12345