A CONTRIBUTION TO THE THEORY OF THE EBIC CONTRAST OF LATTICE-DEFECTS IN SEMICONDUCTORS

被引：65

作者：

PASEMANN, L

机构：

来源：

ULTRAMICROSCOPY | 1981年 / 6卷 / 03期

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D O I：

10.1016/S0304-3991(81)80159-3

中图分类号：

TH742 [显微镜];

学科分类号：

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页码：237 / 250

页数：14

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