EFFECT OF NITROGEN DOPING ON GLOW-DISCHARGE AMORPHOUS-SILICON FILMS

被引：20

作者：

PIETRUSZKO, SM

NARASIMHAN, KL

GUHA, S

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1981年 / 43卷 / 02期

关键词：

D O I：

10.1080/13642818108221905

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：357 / 363

页数：7

共 16 条

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[7] HYDROGEN CONTENT, ELECTRICAL-PROPERTIES AND STABILITY OF GLOW-DISCHARGE AMORPHOUS SILICON [J].

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[9] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J].

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