OXIDIZED BORON NITRIDE WAFERS AS AN IN-SITU BORON DOPANT FOR SILICON DIFFUSIONS

被引：19

作者：

RUPPRECHT, D ^{[1
]}

STACH, J ^{[1
]}

机构：

[1] PENN STATE UNIV, ELECTR ENGN DEPT, SOLID STATE DEVICE LAB, UNIVERSITY PK, PA 16802 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 09期

关键词：

D O I：

10.1149/1.2403675

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1266 / 1271

页数：6

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