THEORY OF ANOMALOUS NERNST-ETTINGSHAUSEN EFFECT IN FERROMAGNETIC SEMICONDUCTORS

被引：0

作者：

LAZAREV, GL

机构：

来源：

FIZIKA TVERDOGO TELA | 1972年 / 14卷 / 10期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3025 / &

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[21] THE NERNST-ETTINGSHAUSEN EFFECT IN GALLIUM ARSENIDE
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