CRYSTAL-GROWTH AND CHARACTERIZATION OF GALLIUM NITRIDE

被引：31

作者：

CHU, TL ^{[1
]}

ITO, K ^{[1
]}

SMELTZER, RK ^{[1
]}

CHU, SSC ^{[1
]}

机构：

[1] SO METHODIST UNIV,ELECTR SCI CTR,DALLAS,TX 75275

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 01期

关键词：

D O I：

10.1149/1.2396813

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：159 / 162

页数：4

共 19 条

[1] MASS SPECTROMETRIC STUDIES OF VAPOR-PHASE CRYSTAL GROWTH .2. GAN [J].

BAN, VS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :761-&

[2] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J].

BOOKER, GR ;

STICKLER, R .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) :3281-&

[3] GALLIUM NITRIDE FILMS [J].

CHU, TL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) :1200-&

[4]

CHU TL, 1963, J ELECTROCHEM SOC, V110, P338

[5] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J].

DINGLE, R ;

SELL, DD ;

STOKOWSKI, SE ;

ILEGEMS, M .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04) :1211-+

[6] PRESSURE OF GA2O OVER GALLIUM-GA2O3 MIXTURES [J].

FROSCH, CJ ;

THURMOND, CD .

JOURNAL OF PHYSICAL CHEMISTRY, 1962, 66 (05) :877-&

[7] ELECTRICAL AND OPTICAL PROPERTIES OF RF-SPUTTERED GAN AND INN [J].

HOVEL, HJ ;

CUOMO, JJ .

APPLIED PHYSICS LETTERS, 1972, 20 (02) :71-&

[8]

Ilegems M.J., 1972, J CRYSTAL GROWTH, V13, P360

[9] PREPARATION AND STRUCTURAL PROPERTIES OF GAN THIN FILMS [J].

KOSICKI, BB ;

KAHNG, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :593-&

[10] PREPARATION, STABILITY, AND LUMINESCENCE OF GALLIUM NITRIDE [J].

LORENZ, MR ;

BINKOWSKI, BB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) :24-26

← 1 2 →