INVESTIGATION OF SURFACE PASSIVATION OF AMORPHOUS-SILICON USING PHOTOTHERMAL DEFLECTION SPECTROSCOPY

被引：23

作者：

FRYE, RC

KUMLER, JJ

WONG, CC

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 02期

关键词：

D O I：

10.1063/1.97866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：101 / 103

页数：3

共 5 条

[1] SENSITIVE PHOTOTHERMAL DEFLECTION TECHNIQUE FOR MEASURING ABSORPTION IN OPTICALLY THIN MEDIA [J].

BOCCARA, AC ;

FOURNIER, D ;

JACKSON, W ;

AMER, NM .

OPTICS LETTERS, 1980, 5 (09) :377-379

[2] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].

JACKSON, WB ;

AMER, NM .

PHYSICAL REVIEW B, 1982, 25 (08) :5559-5562

[3] PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION [J].

JACKSON, WB ;

AMER, NM ;

BOCCARA, AC ;

FOURNIER, D .

APPLIED OPTICS, 1981, 20 (08) :1333-1344

[4] OPTICAL-ABSORPTION SPECTRA OF SURFACE OR INTERFACE STATES IN HYDROGENATED AMORPHOUS-SILICON [J].

JACKSON, WB ;

BIEGELSEN, DK ;

NEMANICH, RJ ;

KNIGHTS, JC .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :105-107

[5] COMMENT ON THE OPTICAL-ABSORPTION EDGE IN ALPHA-SI-H [J].

ROXLO, CB ;

ABELES, B ;

WRONSKI, CR ;

CODY, GD ;

TIEDJE, T .

SOLID STATE COMMUNICATIONS, 1983, 47 (12) :985-987

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