LOCALIZED STATES IN MOBILITY GAP OF AMORPHOUS QUARTZ AND GLASS

被引：9

作者：

ANDERSON, JC ^{[1
]}

机构：

[1] IMPERIAL COLL,DEPT ELECT ENGN,MAT SECT,LONDON SW7 2BT,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE | 1974年 / 30卷 / 04期

关键词：

D O I：

10.1080/14786437408207238

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：839 / 851

页数：13

共 13 条

[1] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J].

COHEN, MH ;

FRITZSCHE, H ;

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1065-+

[2] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J].

DAVIS, EA ;

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1970, 22 (179) :903-&

[3]

EGERTON RF, 1968, THESIS LONDON U

[4]

FISHER JL, 1973, THESIS LONDON U

[5] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J].

HEIMAN, FP ;

WARFIELD, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) :167-&

[6] STABILIZATION OF MOS DEVICES [J].

HOFSTEIN, SR .

SOLID-STATE ELECTRONICS, 1967, 10 (07) :657-+

[7] EFFECTS OF TRAPS ON THIN FILM TRANSISTORS [J].

ISHII, H ;

YAMADA, K .

SOLID-STATE ELECTRONICS, 1967, 10 (12) :1201-&

[8] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].

KINGSTON, RH ;

NEUSTADTER, SF .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :718-720

[9]

LILE DL, 1968, THESIS LONDON U

[10] SURFACE TRAPPING IN THIN INDIUM-ANTIMONIDE FILMS [J].

LING, CH .

THIN SOLID FILMS, 1973, 15 (01) :103-114

← 1 2 →