BODY TIE PLACEMENT IN CMOS SOI DIGITAL CIRCUITS FOR TRANSIENT RADIATION ENVIRONMENTS

被引：14

作者：

ALLES, ML ^{[1
]}

KERNS, SE ^{[1
]}

MASSENGILL, LW ^{[1
]}

CLARK, JE ^{[1
]}

JONES, KL ^{[1
]}

LOWTHER, RE ^{[1
]}

机构：

[1] HARRIS SEMICOND INC,PALM BAY,FL

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1991年 / 38卷 / 06期

关键词：

D O I：

10.1109/23.124102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents criteria for the use of body ties to reduce or eliminate parasitic bipolar effects important in the transient radiation response of SOI/CMOS devices. A theoretically derived body tie spacing rule is verified using both TRIGSPICE and PISCESII with photocurrent injection capabilities. The tie spacing rule, which is independent of feature size within bounds, provides a simple guideline for design/layout of CMOS/SOI digital circuits for harsh transient radiation environments.

引用

页码：1259 / 1264

页数：6

共 9 条

[1] ALLES M, 1990, GOVT MICROCIRCUIT AP, P443
[2] ALLES ML, 1990, THESIS VANDERBILT U
[3] DAVIS GE, 1985, IEEE T NUCLEAR S DEC, P4432
[4] HOHL JH, 1989, IEEE T NUCLEAR S DEC, P2260
[5] MODEL FOR CMOS/SOI SINGLE-EVENT VULNERABILITY
KERNS, SE
MASSENGILL, LW
KERNS, DV
ALLES, ML
HOUSTON, TW
LU, H
HITE, LR
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) : 2305 - 2310
[6] MASSENGILL LW, 1987, THESIS N CAROLINA ST
[7] MASSENGILL LW, 1985, TRIGSPICE TRANSIENT
[8] MASSENGILL LW, 1990, IEEE ELECTRON DE FEB, P98
[9] ON THE VARIATION OF JUNCTION-TRANSISTOR CURRENT-AMPLIFICATION FACTOR WITH EMITTER CURRENT
WEBSTER, WM
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (06): : 914 - 920

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