ELECTRONIC-STRUCTURE OF CUBIC BORON-NITRIDE WITHIN THE LOCAL-DENSITY APPROXIMATION

被引:16
作者
MATAR, S
GONNET, V
DEMAZEAU, G
机构
来源
JOURNAL DE PHYSIQUE I | 1994年 / 4卷 / 02期
关键词
D O I
10.1051/jp1:1994141
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The electronic structure of cubic boron nitride is revisited using ASW self-consistent calculations. Our results are confronted with calculated data from the literature. The equilibrium lattice constant, the bulk modulus, the valence band width and to a lesser extent the band gaps are found to be within reasonable agreement with experiment. Empty spheres (pseudo-atoms with Z = 0) introduced at the interstitial sites create states at the bottom of the conduction band. They should play a role in modifying the band structure when interstitial atoms are introduced.
引用
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页码:335 / 342
页数:8
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