TRANSIENT BEHAVIOUR OF A RANGE OF P+-N-N+ DIODES WITH NARROW CENTRE REGIONS

被引：6
|
作者：
VARSHNEY, RC
ROULSTON, DJ
机构：
来源：
SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 07期
关键词：
D O I：
10.1016/0038-1101(70)90105-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1081 / &
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